all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 9 rev. 02.1, 2015-07-29 PXAC182908FV thermally-enhanced high power rf ldmos fet 240 w, 28 v, 1805 C 1880 mhz description the PXAC182908FV is a 240-watt ldmos fet with an asymmetri - cal design intended for use in multi-standard cellular power amplifer applications in the 1805 to 1880 mhz frequency band. features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless fanges. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. PXAC182908FV package h-37275g-6/2 rf characteristics single-carrier wcdma specifications (tested in infineon doherty test fixture) v dd = 28 v, i dq = 600 ma, v gspeak = 0.70 v, p out = 70 w avg, ? 1 = 1880 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 10 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 14 15 db drain effciency h d 49.5 51 % adjancent channel power ratio acpr C27.5 C25 dbc features ? broadband internal input and output matching ? asymmetrical doherty design - main : p 1db = 120 w typ - peak : p 1db = 220 w typ ? typical pulsed cw performance, 1842.5 mhz, 28 v, combined outputs - output power at p 1db = 240 w - effciency = 52.6% - gain = 14.5 db ? capable of handling 10:1 vswr @28 v, 240 w (cw) output power ? human body model class 2 (per ansi/esda/ jedec js-001) ? integrated esd protection ? low thermal resistance ? pb-free and rohs compliant -60 -40 -20 0 20 40 60 0 4 8 12 16 20 24 25 30 35 40 45 50 55 efficiency (%) peak/average ratio, gain (db) average output power (dbm) single - carrier wcdma drive - up v dd = 28 v, i dq = 600 ma, ? = 1880 mhz, 3gpp wcdma signal, par = 10 db, 3.84 mhz bw gain efficiency par @ 0.01% ccdf pxac182908fc_g1
data sheet 2 of 9 rev. 02.1, 2015-07-29 PXAC182908FV dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1 a v ds = 60 v, v gs = 0 v i dss 10 a on-state resistance (main) v gs = 10 v, v ds = 0.1 v r ds(on) 0.11 w on-state resistance (peak) v gs = 10 v, v ds = 0.1 v r ds(on) 0.06 w operating gate voltage (main) v ds = 28 v, i dq = 600 ma v gs 2.45 2.70 2.95 v (peak) v ds = 28 v, i dq = 0 a v gs 0.45 0.60 0.80 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistance (main, t case = 70c, 56 w cw) r qjc 0.56 c/w (peak, t case = 70c, 200 w cw) r qjc 0.29 c/w ordering information type and version order code package description shipping PXAC182908FV v1 r0 PXAC182908FVv1r0xtma1 h-37275g-6/2 , earless fange tape & reel, 50 pcs PXAC182908FV v1 r250 PXAC182908FVv1r250xtma1 h-37275g-6/2 , earless fange tape & reel, 250 pcs
PXAC182908FV data sheet 3 of 9 rev. 02.1, 2015-07-29 typical performance (data taken in a production test fxture) 0 10 20 30 40 50 60 -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 efficiency(%) acp up & low (dbc) average output power (dbm) single - carrier wcdma drive - up v dd = 28 v, i dq = 600 ma, ? = 1880 mhz, 3gpp wcdma signal, par = 10 db, bw = 3.84 mhz acpu acpl eff pxac182908fc_g2 0 10 20 30 40 50 60 -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 efficiency(%) acp up & low (dbc) average output power (dbm) single - carrier wcdma 3gpp drive - up v dd = 28 v, i dq = 600 ma, ? = 1805 - 1880 mhz, 3gpp wcdma signal, par = 10 db, bw = 3.84 mhz 1805 acpu 1842.5 acpu 1880 acpu 1805 acpl 1842.5 acpl 1880 acpl 1805 eff 1842.5 eff 1880 eff pxac182908fc_g3 5 15 25 35 45 55 10 12 14 16 18 20 1650 1750 1850 1950 2050 efficiency (%) gain (db) frequency (mhz) single - carrier wcdma broadband performance v dd = 28 v, i dq = 600 ma, p out = 48.45 dbm, 3gpp wcdma signal, par = 10 db efficiency gain pxac182908fc_g4 0 10 20 30 40 50 60 8 10 12 14 16 18 20 29 33 37 41 45 49 53 57 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 600 ma 1880 gain 1842.5 gain 1805 gain 1880 eff 1842.5 eff 1805 eff efficiency gain pxac182908fc_g5
data sheet 4 of 9 rev. 02.1, 2015-07-29 PXAC182908FV typical performance (cont.) load pull performance main side load pull performance C pulsed cw signal: 10 s, 10% duty cycle, 28 v, i dq = 720 ma p 1db max output power max pae freq [mhz] zs [ w] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] 1805 4.98+j9.12 2.04Cj3.48 19.6 51.3 133 55.3 3.50Cj2.06 21.4 50.0 99 63.6 1842.5 2.98+j7.93 2.19Cj3.56 19.0 51.3 136 55.9 3.48Cj1.96 20.9 49.9 99 64.0 1880 1.98+j6.60 2.18Cj3.52 20.0 51.2 132 55.7 3.36Cj1.89 21.9 49.8 95 64.0 peak side load pull performance C pulsed cw signal: 10 s, 10% duty cycle, 28 v, i dq = 100 ma p 1db max output power max pae freq [mhz] zs [ w] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] 1805 0.68Cj3.85 4.06Cj3.83 18.6 54.2 261 55.4 3.01Cj0.87 20.4 52.5 176 64.1 1842.5 0.60Cj4.14 4.50Cj3.68 18.9 54.1 258 55.3 3.02Cj1.36 20.6 52.8 192 64.3 1880 0.87Cj4.71 5.12Cj3.69 18.8 54.0 249 54.0 3.01Cj1.52 20.5 52.8 192 64.6 -18 -14 -10 -6 -2 10 12 14 16 18 1700 1750 1800 1850 1900 1950 2000 2050 input return loss (db) gain (db) frequency (mhz) small signal cw gain & input return loss v dd = 28 v, i dq = 600 ma irl gain pxac182908fc_g7 0 10 20 30 40 50 60 5 10 15 20 27 35 43 51 59 efficiency (%) gain (db) output power (dbm) cw performance at various v dd i dq = 600 ma, ? = 1880 mhz 24v gain 28v gain 32v gain 24v eff 28v eff 32v eff pxac182908fc_g6 efficiency gain
PXAC182908FV data sheet 5 of 9 rev. 02.1, 2015-07-29 reference circuit , 1805 C 1880 mhz reference circuit assembly diagram (not to scale) c 226 c228 c201 c204 c 217 c209 c216 c227 c213 c 218 c214 c212 c203 c211 c 208 c202 c206 c210 c222 c 221 c220 c205 c207 c225 c224 c223 c215 c219 r 801 r 803 r 804 c 801 c803 r 802 c802 r 805 r 105 c109 c103 c105 c110 c108 r 103 r 101 pxac 182908fv _out_02 _d rf in rf out v dd p x a c 1 8 2 9 0 8 f v _ c d _ 0 7 - 0 6 - 2 0 1 5 ro 4350 , .020 (194 ) pxac 182908fv_in_02a ro4350 , .020 (61) + s 3 s 1 s 2 r 102 c101 c102 u 1 c107 c106 c104 r 104 s 4 c 112 c111 c223 c 231 c 230 c229 v dd v gspeak v gsmain
data sheet 6 of 9 rev. 02.1, 2015-07-29 PXAC182908FV reference circuit (cont.) reference circuit assembly dut PXAC182908FV v1 test fixture part no. lta/PXAC182908FV v1 pcb rogers 4350, 0.508 mm [0.020] thick, 2 oz. copper, r = 3.66, ? = 1805 C 1880 mhz find gerber files for this test fixture on the infineon web site at http://www.infineon.com/rfpower components information component description manufacturer p/n input c101, c105, c110, c111 capacitor, 18 pf atc atc100a180jw150xb c102, c112 capacitor, 10 f murata lll31bc70g106ma01l c103 capacitor, 1.5 pf atc atc100a1r5cw150xb c104 capacitor, 3.0 pf atc atc100a3r0cw150xb c106 capacitor, 0.4 pf atc atc100a0r4cw150xb c107 capacitor, 1.0 pf atc atc100a1r0cw150xb c108 capacitor, 0.7 pf atc atc100a0r7cw150xb c109 capacitor, 0.5 pf atc atc100a0r5cw150xb c801, c802, c803 capacitor, 1000 pf panasonic electronic components ecj-1vb1h102k r101, r103 resistor, 5.1 w panasonic electronic components erj-8geyj5r1v r102, r104 resistor, 1k w panasonic electronic components erj-8geyj102v r105 resistor, 50 w richardson richardson r801 resistor, 1.3k w panasonic electronic components erj-3geyj132v r802 resistor 1.2k w panasonic electronic components erj-3geyj122v r803, r804, r805 resistor, 50 w panasonic electronic components erj-8geyj510v s1 transistor infineon technologies bcp56 s2 voltage regualtor texas instruments lm78l05acm s3, s4 potentiometer, 2k w bourns inc. 3224w-1-202e u1 hybrid coupler anaren x3c19p1-05s output c201, c202, c203, c204, c205, c206, c207, c208, c209, c210, c211, c212, c213, c214, c215, c216, c217, c218, c219 capacitor, 10 f taiyo yuden umk325c7106mm-t c220, c226, c227, c228 capacitor, 18 pf atc atc100a180jw150xb c221 capacitor, 2.2 pf atc atc100a2r2cw150xb c222 capacitor, 0.3 pf atc atc100a0r3cw150xb c223 capacitor, 1.2 pf atc atc100a1r2cw150xb c224 capacitor, 0.4 pf atc atc100a0r4cw150xb c225 capacitor, 1.1 pf atc atc100a1r1cw150xb c229, c230, c231, c232 capacitor, 220 f panasonic electronic components eee-fp1v221ap
PXAC182908FV data sheet 7 of 9 rev. 02.1, 2015-07-29 pinout diagram (top view) lead connections for PXAC182908FV pin description d1 drain device 1 (main) d2 drain device 2 (peak) g1 gate device 1 (main) g2 gate device 2 (peak) s source (fange) v2 v1 d2 d1 g1 g2 s h - 34275 g - 6 - 2 _pd _10 - 10 - 2012 main peak
data sheet 8 of 9 rev. 02.1, 2015-07-29 PXAC182908FV package outline specifcations package h-37275g-6/2 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source; v1, v2 C v dd . 5. lead thickness: 0.13 + 0.051/C0.025 mm [0.005+0.002/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. (1.63 [0. 064 ]) 4. 58 +0 . 25 - 0. 13 [ . 180 +. 010 - . 005 ] 32 . 26 [1 . 270 ] 31 . 24 0. 28 [1. 230 . 011 ] c l s sph 2 . 134 [. 084 ] h - 37275 g - 6 / 2 _sl _po _03 _07 - 25 - 2013 2x 45 x . 64 [. 025 ] v 2 2x 2.29 [. 090 ] ( 13. 72 [. 540 ]) 2 x 2.22 [. 087 ] 30. 61 [1. 205 ] 2x (1.27 [. 050 ]) 2x 30 l c c l l c 4x r0 . 51 +. 38 - . 13 [ r . 020 +. 015 - . 005 ] 4x 12 . 45 [. 490 ] c l g1 g 2 d2 d 1 v1 2x 26 . 16 [1. 030 ] ( 18. 24 [. 718 ]) 10. 16 [. 400 ] 6 x 4. 04 0.51 [. 159 . 020 ] 9. 14 [. 360 ] d
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